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APTC60DDAM70T3
Dual boost chopper
Super Junction MOSFET
VDSS = 600V RDSon = 70m max @ Tj = 25C ID = 39A @ Tc = 25C
Application * AC and DC motor control * Switched Mode Power Supplies * Power Factor Correction Features *
Q2 4
Power Module
13 14
CR1 22 7
CR2
23 Q1 26
8
27 29 15 30 31 R1 32 16
3
* * * *
- Ultra low RDSon - Low Miller capacitance - Ultra low gate charge - Avalanche energy rated - Very rugged Kelvin source for easy drive Very low stray inductance - Symmetrical design Internal thermistor for temperature monitoring High level of integration
28 27 26 25 29 30
23 22
20 19 18 16 15
31 32 2 3 4 7 8 10 11 12
14 13
Benefits * Outstanding performance at high frequency operation * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Solderable terminals both for power and signal for easy PCB mounting * Low profile * Each leg can be easily paralleled to achieve a single boost of twice the current capability
All multiple inputs and outputs must be shorted together Example: 13/14 ; 29/30 ; 22/23 ...
Absolute maximum ratings
Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS
Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25C Tc = 80C
Tc = 25C
V m W A mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website - http://www.advancedpower.com
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APTC60DDAM70T3 - Rev 0 September, 2004
Max ratings 600 39 29 120 20 70 250 20 1 1800
Unit V A
APTC60DDAM70T3
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol BVDSS IDSS RDS(on) VGS(th) IGSS Characteristic Test Conditions Min 600 Tj = 25C Tj = 125C 2.1 0.5 25 250 70 3.9 100 Drain - Source Breakdown Voltage Zero Gate Voltage Drain Current Drain - Source on Resistance Gate Threshold Voltage Gate - Source Leakage Current VGS = 0V, ID = 250A
VGS = 0V,VDS = 600V VGS = 0V,VDS = 600V
Typ
Max
Unit V A m V nA
VGS = 10V, ID = 39A VGS = VDS, ID = 2.7mA VGS = 20 V, VDS = 0V
3
Dynamic Characteristics
Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate - Source Charge Gate - Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy
Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VBus = 300V ID = 39A Inductive Switching @ 125C VGS = 15V VBus = 400V ID = 39A R G = 5 Inductive switching @ 25C VGS = 15V, VBus = 400V ID = 39A, R G = 5 Inductive switching @ 125C VGS = 15V, VBus = 400V ID = 39A, R G = 5
Min
Typ 7 2.56 0.21 259 29 111 21 30 283 84 670 980 1096 1206
Max
Unit nF
nC
ns
J J
Diode ratings and characteristics
Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF(A V) VF Maximum Reverse Leakage Current Maximum Average Forward Current Diode Forward Voltage
Test Conditions VR=600V
50% duty cycle
Min 600 Tj = 25C Tj = 125C Tc = 70C
Typ
Max 250 750
Unit V A A
Tj = 150C Tj = 25C Tj = 100C Tj = 25C Tj = 100C
trr Qrr
Reverse Recovery Time Reverse Recovery Charge
74 74 123 288
IF = 30A VR = 400V di/dt=200A/s
ns nC
Eon includes diode reverse recovery. In accordance with JEDEC standard JESD24-1.
APT website - http://www.advancedpower.com
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APTC60DDAM70T3 - Rev 0 September, 2004
IF = 30A IF = 60A IF = 30A
30 2.2 2.7 1.5
2.7 V
APTC60DDAM70T3
Thermal and package characteristics
Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight IGBT Diode 2500 -40 -40 -40 Min Typ Max 0.5 1.2 150 125 100 4.7 110 Unit C/W V C N.m g
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
To heatsink
M4
Temperature sensor NTC
Symbol Characteristic R25 Resistance @ 25C B 25/85 T25 = 298.16 K
Min
Typ 68 4080
Max
Unit k K
RT =
R 25 1 1 exp B25 / 85 T - T 25
T: Thermistor temperature RT : Thermistor value at T
Package outline
1
12
APT website - http://www.advancedpower.com
3-6
APTC60DDAM70T3 - Rev 0 September, 2004
17
28
APTC60DDAM70T3
Typical Performance Curve
0.6 Thermal Impedance (C/W) 0.5 0.4 0.3 0.2 0.1 Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.9 0.7 0.5 0.3 0.1 0.05 0.0001 Single Pulse 0.001 0.01 0.1 1 10
0 0.00001
rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics 200 ID, Drain Current (A) 6.5V 6V 5.5V 5V 40 0 0 4.5V 4V 5 10 15 20 VDS, Drain to Source Voltage (V) RDS(on) vs Drain Current I D, DC Drain Current (A)
Normalized to V GS=10V @ 19.5A
Transfert Characteristics 140 I D, Drain Current (A) 120 100 80 60 40 20 0 25 0 1 2 3 4 5 6 VGS, Gate to Source Voltage (V) 7 TJ=125C TJ=25C TJ=-55C
VDS > ID(on)xRDS (on)MAX 250s pulse test @ < 0.5 duty cycle
160 120 80
VGS=15&10V
RDS(on) Drain to Source ON Resistance
1.1 1.05 1 0.95 0.9 0
DC Drain Current vs Case Temperature 45
VGS=10V
40 35 30 25 20 15 10 5 25 50 75 100 125 TC, Case Temperature (C) 150
APTC60DDAM70T3 - Rev 0 September, 2004
VGS =20V
0 10 20 30 40 50 60
I D, Drain Current (A)
APT website - http://www.advancedpower.com
4-6
APTC60DDAM70T3
RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.2 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) ON resistance vs Temperature
3.0 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) Maximum Safe Operating Area
V GS=10V ID= 39A
Threshold Voltage vs Temperature 1.2
VGS(TH), Threshold Voltage (Normalized)
1000
I D, Drain Current (A)
1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (C)
100 10 1 0.1 1
limited by RDSon
100 s 1 ms DC line 10 ms
Single pulse TJ =150C 10 100 1000
VDS, Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage
VGS , Gate to Source Voltage (V)
Capacitance vs Drain to Source Voltage 100000
C, Capacitance (pF)
14 12 10 8 6 4 2 0 0 50
APTC60DDAM70T3 - Rev 0 September, 2004
10000
Ciss Coss
ID=39A TJ=25C
V DS=120V VDS=300V V DS =480V
1000 Crss
100
10 0 10 20 30 40 50 VDS, Drain to Source Voltage (V)
100 150 200 Gate Charge (nC)
250
300
APT website - http://www.advancedpower.com
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APTC60DDAM70T3
350 300
td(on) and td(off) (ns)
Delay Times vs Current 120 td(off)
VDS=400V RG=5 TJ=125C L=100H
Rise and Fall times vs Current
VDS=400V RG=5 T J=125C L=100H
100
tr and t f (ns)
250 200 150 100 50 0 0 10 20 30 40 50 60 70 ID, Drain Current (A) Switching Energy vs Current 2.5
Switching Energy (mJ)
VDS=400V RG=5 TJ=125C L=100H
tf
80 60 40 20 0 0
td(on)
tr
10
20
30
40
50
60
70
ID, Drain Current (A) Switching Energy vs Gate Resistance 5 4 3 2 1 0
V DS =400V ID=39A T J=125C L=100H
Switching Energy (mJ)
2 1.5
Eoff Eon
Eoff
1 0.5 0 0 10 20 30 40 50 60 ID, Drain Current (A) 70
Eon
0
5 10 15 20 25 30 35 40 45 50 Gate Resistance (Ohms)
Operating Frequency vs Drain Current 140
Frequency (kHz) I DR, Reverse Drain Current (A)
160
Source to Drain Diode Forward Voltage 1000
120 100 80 60 40 20 0 5
V DS =400V D=50% RG =5 T J=125C T C=75C hard switching ZCS ZVS
100
TJ=150C
10
TJ =25C
1 0.3
APTC60DDAM70T3 - Rev 0 September, 2004
10
15 20 25 30 ID, Drain Current (A)
35
0.5 0.7 0.9 1.1 1.3 1.5 VSD, Source to Drain Voltage (V)
"COOLMOSTM comprise a new family of transistors developed by Infineon Technologies AG. "COOLMOS" is a trademark of Infineon Technologies AG". APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
APT website - http://www.advancedpower.com
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